Transistors 2N2222 BC327 BC337 BC547B 2N2907A TO-92 Package – Pack of 25 50 100

£2.75£5.51

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This listing is for commonly-used PNP and NPN transistors in the TO-92 package available as a 25, 50 or 100 pack at amazing prices!

The transistors are:

2N2222 NPN General Purpose Transistor

The 2N2222 is a versatile transistor ideal for many uses.

Absolute Maximum Ratings

These ratings are at an ambient temperature of 25°C, unless otherwise stated.

Symbol Description Value
VCBO Collector-Base Voltage 60V
VCEO Collector-Emitter Voltage 30V
VEBO Emitter-Base Voltage 5V
IC Collector Current 500mA
PC Collector Power Dissipation 625mW
TJ Junction Temerature 150°C
TSTG Storage Temperature -55°C to 150°C

Electrical Characteristics

These characteristics are at an ambient temperature of 25°C, unless otherwise stated.

Symbol Description When Min Max
BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 60V
BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 30V
BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 5V
ICBO Collector Cut-off Current BCB=50V, IE=0 0.01µA
IEBO Emitter Cut-off Current BEB=3V, IC=0 10nA
hFE DC Current Gain VCE=10V, IC=0.1mA
VCE=10V, IC=150mA
35
100
300
fT Current Gain Bandwidth Product VCE=20V, IC=20mA, f=100MHz 300
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 8pF

2N2907A PNP General Purpose Transistor

The 2N2907A is a versatile transistor ideal for many uses.

Absolute Maximum Ratings

These ratings are at an ambient temperature of 25°C, unless otherwise stated.

Symbol Description Value
VCBO Collector-Base Voltage -60V
VCEO Collector-Emitter Voltage -60V
VEBO Emitter-Base Voltage -5V
IC Collector Current -800mA
PC Collector Power Dissipation 625mW
TJ Junction Temerature 150°C
TSTG Storage Temperature -55°C to 150°C

Electrical Characteristics

These characteristics are at an ambient temperature of 25°C, unless otherwise stated.

Symbol Description When Min Max
BVCBO Collector-Base Breakdown Voltage IC=-10µA, IE=0 -60V
BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 -60V
BVEBO Emitter-Base Breakdown Voltage IE=-10µA, IC=0 -5V
ICBO Collector Cut-off Current BCB=-30V, IE=0 -0.02µA
hFE DC Current Gain VCE=-10V, IC=-0.1mA
VCE=-10V, IC=-150mA
75
100
100
fT Current Gain Bandwidth Product VCE=-20V, IC=-50mA, f=100MHz 200
Cob Output Capacitance VCB=-10V, IE=0, f=100kHz 8pF

BC327 PNP Switching and Amplifier Transistor

The BC327 is a transistor ideally suited to Audio Frequency driver stages and low-power output stages. It is also the ideal complement to the BC337 transistor.

Absolute Maximum Ratings

These ratings are at an ambient temperature of 25°C, unless otherwise stated.

Symbol Description Value
VCBO Collector-Base Voltage -50V
VCEO Collector-Emitter Voltage -45V
VEBO Emitter-Base Voltage -5V
IC Collector Current -800mA
PC Collector Power Dissipation 625mW
TJ Junction Temerature 150°C
TSTG Storage Temperature -55°C to 150°C

Electrical Characteristics

These characteristics are at an ambient temperature of 25°C, unless otherwise stated.

Symbol Description When Min Max
BVCBO Collector-Emitter Breakdown Voltage IC=-0.1mA, VBE=0 -50V
BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 -45V
BVEBO Emitter-Base Breakdown Voltage IE=-10µA, IC=0 -5V
ICBO Collector Cut-off Current VCE=-45V, VBE=0 -100nA
hFE DC Current Gain VCE=-1V, IC=-100mA
VCE=-1V, IC=-300mA
160
40
400
 
fT Current Gain Bandwidth Product VCE=-5V, IC=-10mA, f=20MHz 100
Cob Output Capacitance VCB=-10V, IE=0, f=1MHz 12pF

BC337 NPN Switching and Amplifier Transistor

The BC337 is a transistor ideally suited to Audio Frequency driver stages and low-power output stages. It is also the ideal complement to the BC327 transistor.

Absolute Maximum Ratings

These ratings are at an ambient temperature of 25°C, unless otherwise stated.

Symbol Description Value
VCBO Collector-Base Voltage 50V
VCEO Collector-Emitter Voltage 45V
VEBO Emitter-Base Voltage 5V
IC Collector Current 800mA
PC Collector Power Dissipation 625mW
TJ Junction Temerature 150°C
TSTG Storage Temperature -55°C to 150°C

Electrical Characteristics

These characteristics are at an ambient temperature of 25°C, unless otherwise stated.

Symbol Description When Min Max
BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 45V
BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 50V
BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 5V
ICBO Collector Cut-off Current BCB=50V, IE=0 0.02nA
hFE DC Current Gain VCE=1V, IC=100mA
VCE=1V, IC=300mA
100
60
630
 
fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=20MHz 100
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 12pF

BC547 NPN Switching Transistor

The BC547 is a transistor ideally suited for switching use. It is also the ideal complement to the BC556 to BC560 transistors.

Absolute Maximum Ratings

These ratings are at an ambient temperature of 25°C, unless otherwise stated.

Symbol Description Value
VCBO Collector-Base Voltage 50V
VCEO Collector-Emitter Voltage 45V
VEBO Emitter-Base Voltage 6V
IC Collector Current 100mA
PC Collector Power Dissipation 500mW
TJ Junction Temerature 150°C
TSTG Storage Temperature -65°C to 150°C

Electrical Characteristics

These characteristics are at an ambient temperature of 25°C, unless otherwise stated.

Symbol Description When Min Max
ICBO Collector Cut-off Current BCB=50V, IE=0 0.02nA
hFE DC Current Gain VCE=5V, IC=2mA 200 450
fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300
Cob Output Capacitance VCB=0.5V, IE=0, f=1MHz 9pF

 

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